General Purpose and Low VCE(sat) Transistors | MJE3055T (LEGACY FAIRCHILD)

Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt

Obsolete

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概览

The Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.

Replacement Active Part Number: MJE3055T

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  • DC Current Gain Specified to 10 Amperes
  • High Current Gain - Bandwidth Product -
    fT = 2.0 MHz (Min) @ IC
    fT = 500 mAdc
  • Pb-Free Packages are Available

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VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

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MJE3055TTU

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

General Purpose

8

10

60

70

5

-

1.8

20

100

2

125

Price N/A

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可靠性数据

Die Related Summary Data

Device: MJE3055TTU

Equivalent to wafer fab process: TM

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平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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